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KMM53232004CK - 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

KMM53232004CK_720848.PDF Datasheet


 Full text search : 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V


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KMM53632000CKG KMM53632000CK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM372F3200BS1 KMM372F3280BS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
Samsung Semiconductor Co., Ltd.
KMM372F3200CS1 KMM372F3280CS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
Samsung Semiconductor Co., Ltd.
KMM53216004CK KMM53216004CKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
Samsung semiconductor
KMM53616004BKG KMM53616004BK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM53616000BKG KMM53616000BK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM53616000CK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
Samsung Semiconductor Co., Ltd.
KMM372V3280CK4 KMM372V3200CK4 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HSD32M32M4V-F10 HSD32M32M4V-F10L HSD32M32M4V-F12 H Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
Hanbit Electronics Co.,Ltd
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT 8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
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16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
Infineon Technologies AG
H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
 
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